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| FDMC8882 N-Channel Power Trench(R) MOSFET May 2009 FDMC8882 N-Channel Power Trench(R) MOSFET 30 V, 16 A, 14.3 m: Features Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 30 20 16 34 10.5 40 18 2.3 -55 to +150 W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.6 53 C/W Package Marking and Ordering Information Device Marking FDMC8882 Device FDMC8882 Package MLP 3.3x3.3 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units (c)2009 Fairchild Semiconductor Corporation FDMC8882 Rev.C 1 www.fairchildsemi.com FDMC8882 N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 PA, VGS = 0 V ID = 250 PA, referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 125 C VGS = 20 V, VDS = 0 V 30 25 1 250 100 V mV/C PA nA On Characteristics VGS(th) 'VGS(th) 'TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 PA ID = 250 PA, referenced to 25 C VGS = 10 V, ID = 10.5 A rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 8.3 A VGS = 10 V, ID = 10.5 A TJ = 125 C VDD = 5 V, ID = 10.5 A 1.2 1.9 -5 12.4 16.0 17.4 33 S 14.3 22.5 m: 2.5 V mV/C gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 710 140 90 1.0 945 185 135 pF pF pF : Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V ID = 10.5 A VDD = 15 V, ID = 10.5 A, VGS = 10 V, RGEN = 6 : 7 3 17 2 14 7 2.3 2.8 14 10 30 10 20 10 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 10.5 A VGS = 0 V, IS = 1.9 A (Note 2) (Note 2) 0.88 0.76 16 4.4 1.2 1.2 28 10 V ns nC IF = 10.5 A, di/dt = 100 A/Ps NOTES: 1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper b.125 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. (c)2009 Fairchild Semiconductor Corporation FDMC8882 Rev.C 2 www.fairchildsemi.com FDMC8882 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 4 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 4.0 3.5 3.0 2.5 2.0 VGS = 4 V VGS = 4.5 V VGS = 3 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 3.5 V ID, DRAIN CURRENT (A) 30 VGS = 3.5 V 20 VGS = 3 V 10 1.5 1.0 VGS = 6 V VGS = 10 V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 10 20 ID, DRAIN CURRENT (A) 30 40 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 50 SOURCE ON-RESISTANCE (m:) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 ID = 10.5 A VGS = 10 V rDS(on), DRAIN TO ID = 10.5 A PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 40 30 TJ = 125 oC 20 10 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 40 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 60 IS, REVERSE DRAIN CURRENT (A) VGS = 0 V 10 ID, DRAIN CURRENT (A) 30 VDS = 5 V 1 TJ = 150 oC 20 TJ = 150 oC TJ = 25 TJ = -55 oC oC TJ = 25 oC 0.1 10 0.01 TJ = -55 oC 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDMC8882 Rev.C 3 www.fairchildsemi.com FDMC8882 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 10.5 A CAPACITANCE (pF) 1000 VDD = 15 V VDD = 10 V 8 6 4 2 0 0 3 6 Ciss VDD = 20 V Coss 100 f = 1 MHz VGS = 0 V Crss 9 12 15 50 0.1 1 10 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 40 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC TJ = 125 oC TJ = 100 oC 30 20 VGS = 6 V VGS = 10 V Limited by Package 10 RTJC = 6.6 C/W o 1 0.01 0.1 1 10 30 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 50 10 100 Ps 1 ms Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10 V ID, DRAIN CURRENT (A) 100 1 THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms 1s 10 s DC 10 SINGLE PULSE RTJA = 125 oC/W TA = 25 oC 0.1 SINGLE PULSE TJ = MAX RATED RTJA = 125 oC/W TA = 25 oC 1 0.01 0.01 0.1 1 10 100 0.5 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDMC8882 Rev.C 4 www.fairchildsemi.com FDMC8882 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZTJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE RTJA = 125 C/W o t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDMC8882 Rev.C 5 www.fairchildsemi.com FDMC8882 N-Channel Power Trench(R) MOSFET Dimensional Outline and Pad Layout 0.10 C 3.30 A B 2X 3.30 PIN#1 QUADRANT TOP VIEW 0.8 MAX 0.10 C 0.10 C 2X RECOMMENDED LAND PATTERN (0.203) 0.08 C 0.05 0.00 SEATING PLANE SIDE VIEW PIN #1 IDENT 1 (4X) 0.55 0.45 1.150 2.32 2.22 0.785 4 0.350 R0.150 0.299 2.05 1.95 8 0.65 1.95 5 0.40 (8X) 0.30 0.10 0.05 CAB C BOTTOM VIEW A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08XREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY (c)2009 Fairchild Semiconductor Corporation FDMC8882 Rev.C 6 www.fairchildsemi.com FDMC8882 N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) CorePLUSTM Global Power ResourceSM Programmable Active DroopTM (R) CorePOWERTM Green FPSTM QFET TinyBoostTM CROSSVOLTTM QSTM Green FPSTM e-SeriesTM TinyBuckTM GmaxTM CTLTM Quiet SeriesTM TinyLogic(R) GTOTM Current Transfer LogicTM RapidConfigureTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) PSerDesTM STEALTHTM MillerDriveTM Fairchild(R) SuperFETTM MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) UHC(R) (R) (R) FACT SuperSOTTM-8 OPTOPLANAR Ultra FRFETTM (R) FAST(R) SupreMOSTM UniFETTM FastvCoreTM VCXTM SyncFETTM FETBenchTM Sync-LockTM VisualMaxTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDMC8882 Rev.C 7 www.fairchildsemi.com |
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